Double cascade dressed MOSFET from doped Eu3+and Pr3+ in a host YPO4
نویسندگان
چکیده
منابع مشابه
Enhanced Photoluminescence Properties of Li/Al-doped YPO4:Eu Phosphors
Different concentrations of Li/Al-doped YPO4:Eu0.05 phosphors have been prepared by the solid state reaction method and are characterized by X-ray diffraction, scanning electron microscopy, excitation and emission measurements. The dependence of various optical and morphological properties of the prepared materials on Li/Al concentration has been discussed in our present work. Incorporation of ...
متن کاملTransparent Oxyfluoride Nano-Glass Ceramics Doped with Pr3+ and Pr3+–Yb3+ for NIR Emission
1 Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Científicas (CSIC), Madrid, Spain, 2 Microdevices for Photonics Laboratory (MIP-LAB), Istituto di Fisica Applicata “Nello Carrara”, Consiglio Nazionale delle Ricerche (CNR), Sesto Fiorentino, Italy, 3 Museo Storico della Fisica e Centro Studi e Ricerche Enrico Fermi, Roma, Italy, 4 Instituto de Catálisis y Petroleoquímica, Co...
متن کاملLifetime Autler-Townes Splitting of Dressed Multi-Order Fluorescence in Pr3+:YSO
For first time, we study primary and secondary Autler-Townes (AT) splitting of multi-order fluorescence (FL) in time domain. The AT-splitting of multi-order FL signals are controlled by changing power, detuning, and polarization of single and double dressing in a heteronuclear-like molecule system of Pr+3:YSO. The primary and secondary AT-splitting are caused by double cascaded dressing in time...
متن کاملMicrostructure and optical properties of Pr3+-doped hafnium silicate films
In this study, we report on the evolution of the microstructure and photoluminescence properties of Pr3+-doped hafnium silicate thin films as a function of annealing temperature (TA). The composition and microstructure of the films were characterized by means of Rutherford backscattering spectrometry, spectroscopic ellipsometry, Fourier transform infrared absorption, and X-ray diffraction, whil...
متن کاملSymmetric and Asymmetric Double Gate MOSFET Modeling
An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DGMOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: RSC Advances
سال: 2019
ISSN: 2046-2069
DOI: 10.1039/c9ra08550e